Vishay N-Channel MOSFET, 11 A, 500 V, 3-Pin TO-220AB IRFB11N50APBF

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Subtotal (1 tube of 50 units)*

£60.20

(exc. VAT)

£72.25

(inc. VAT)

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  • 650 unit(s) ready to ship
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50 +£1.204£60.20

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RS Stock No.:
178-0823
Mfr. Part No.:
IRFB11N50APBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

520 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

170 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

52 nC @ 10 V

Transistor Material

Si

Width

4.7mm

Length

10.41mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

9.01mm

N-Channel MOSFET, 500V, Vishay Semiconductor


The Vishay power MOSFET has low gate charge Qg results in simple drive requirement and it has improved gate, avalanche and dynamic dV/dt ruggedness.

Operating junction and storage temperature range - 55 to + 150°C


MOSFET Transistors, Vishay Semiconductor

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