Vishay D Series N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB SIHP8N50D-GE3
- RS Stock No.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.33
(exc. VAT)
£7.595
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 5 unit(s) ready to ship
- Plus 30 unit(s) shipping from 09 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.266 | £6.33 |
| 50 - 120 | £1.142 | £5.71 |
| 125 - 245 | £1.014 | £5.07 |
| 250 - 495 | £0.952 | £4.76 |
| 500 + | £0.89 | £4.45 |
*price indicative
- RS Stock No.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8.7 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO-220AB | |
| Series | D Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 850 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.65mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Length | 10.51mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.01mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8.7 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO-220AB | ||
Series D Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 850 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.65mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Length 10.51mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.01mm | ||
Related links
- Vishay D Series N-Channel MOSFET 500 V, 3-Pin TO-220AB SIHP8N50D-GE3
- Vishay D Series N-Channel MOSFET 400 V, 3-Pin TO-220AB SIHP6N40D-GE3
- Vishay D Series N-Channel MOSFET 500 V, 3-Pin DPAK SIHD3N50D-GE3
- Vishay D Series N-Channel MOSFET 400 V, 3-Pin TO-247AC SIHG25N40D-GE3
- Vishay D Series N-Channel MOSFET 550 V, 3-Pin Super-247 SiHS36N50D-GE3
- Vishay D Series N-Channel MOSFET 500 V, 3-Pin TO-247AC IRFP460BPBF
- Vishay D Series N-Channel MOSFET 500 V, 3-Pin TO-220FP SIHF5N50D-E3
- Vishay E Series N-Channel MOSFET 850 V, 3-Pin TO-220AB SIHP21N80AEF-GE3