Vishay N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB IRF820PBF

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Packaging Options:
RS Stock No.:
543-0002
Distrelec Article No.:
301-91-570
Mfr. Part No.:
IRF820PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.7mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

24 nC @ 10 V

Length

10.41mm

Height

9.01mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, 500V, Vishay Semiconductor


The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements


MOSFET Transistors, Vishay Semiconductor

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