- RS Stock No.:
- 543-0002
- Mfr. Part No.:
- IRF820PBF
- Brand:
- Vishay
68 In stock - FREE next working day delivery available
38 available from Europe for delivery within 1 working day(s).
Added
Price Each
£1.23
(exc. VAT)
£1.48
(inc. VAT)
Units | Per unit |
1 - 9 | £1.23 |
10 - 49 | £1.12 |
50 - 99 | £0.98 |
100 - 249 | £0.93 |
250 + | £0.86 |
- RS Stock No.:
- 543-0002
- Mfr. Part No.:
- IRF820PBF
- Brand:
- Vishay
Legislation and Compliance
Product Details
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements
Repetitive avalanche rated
Simple drive requirements
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 2.5 A |
Maximum Drain Source Voltage | 500 V |
Package Type | TO-220AB |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 3 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 50 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 10.41mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 24 nC @ 10 V |
Width | 4.7mm |
Height | 9.01mm |
Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 543-0002
- Mfr. Part No.:
- IRF820PBF
- Brand:
- Vishay
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