Vishay SIS9446DN 2 Type N-Channel MOSFET, 34 A, 40 V Enhancement, 8-Pin 1212-8 SIS9446DN-T1-GE3
- RS Stock No.:
- 279-9976
- Mfr. Part No.:
- SIS9446DN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,299.00
(exc. VAT)
£1,560.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 3,000 unit(s) shipping from 30 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.433 | £1,299.00 |
*price indicative
- RS Stock No.:
- 279-9976
- Mfr. Part No.:
- SIS9446DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SIS9446DN | |
| Package Type | 1212-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | 100 percent Rg and UIS tested, AEC-Q101, RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SIS9446DN | ||
Package Type 1212-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals 100 percent Rg and UIS tested, AEC-Q101, RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay MOSFET is a Dual N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
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