Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3
- RS Stock No.:
- 279-9984
- Mfr. Part No.:
- SISH107DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£5.43
(exc. VAT)
£6.52
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.543 | £5.43 |
| 50 - 90 | £0.403 | £4.03 |
| 100 - 240 | £0.359 | £3.59 |
| 250 - 990 | £0.351 | £3.51 |
| 1000 + | £0.344 | £3.44 |
*price indicative
- RS Stock No.:
- 279-9984
- Mfr. Part No.:
- SISH107DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 34.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | 1212-8 | |
| Series | SISH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.014Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 26.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 34.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type 1212-8 | ||
Series SISH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.014Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 26.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
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