Vishay SISH Type P-Channel MOSFET, 34.4 A, 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 10 units)*

£5.76

(exc. VAT)

£6.91

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 5,990 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40£0.576£5.76
50 - 90£0.428£4.28
100 - 240£0.381£3.81
250 - 990£0.372£3.72
1000 +£0.365£3.65

*price indicative

Packaging Options:
RS Stock No.:
279-9984
Mfr. Part No.:
SISH107DN-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

34.4A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-8

Series

SISH

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.014Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

26.5W

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

Related links