Vishay Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 SIHK155N60E-T1-GE3
- RS Stock No.:
- 279-9919
- Mfr. Part No.:
- SIHK155N60E-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 2000 units)*
£4,202.00
(exc. VAT)
£5,042.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £2.101 | £4,202.00 |
*price indicative
- RS Stock No.:
- 279-9919
- Mfr. Part No.:
- SIHK155N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | 10 x 12 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type 10 x 12 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 1 | ||
The Vishay MOSFET is a E series power MOSFET and the transistor in it is made up of material known as silicon.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance
Avalanche energy rated
Reduced switching and conduction losses
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