Vishay Dual Silicon N-Channel MOSFET, 24 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60EF-T1GE3
- RS Stock No.:
- 268-8308
- Mfr. Part No.:
- SIHK105N60EF-T1GE3
- Brand:
- Vishay
Subtotal (1 reel of 2000 units)*
£4,400.00
(exc. VAT)
£5,280.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £2.20 | £4,400.00 |
*price indicative
- RS Stock No.:
- 268-8308
- Mfr. Part No.:
- SIHK105N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PowerPAK 10 x 12 | |
| Mounting Type | PCB Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PowerPAK 10 x 12 | ||
Mounting Type PCB Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology. It has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies, and telecom power supplies.
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit
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