Vishay Dual Silicon N-Channel MOSFET, 21 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK125N60EF-T1GE3
- RS Stock No.:
- 268-8312
- Mfr. Part No.:
- SIHK125N60EF-T1GE3
- Brand:
- Vishay
Subtotal (1 reel of 2000 units)*
£3,708.00
(exc. VAT)
£4,450.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £1.854 | £3,708.00 |
*price indicative
- RS Stock No.:
- 268-8312
- Mfr. Part No.:
- SIHK125N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PowerPAK 10 x 12 | |
| Mounting Type | PCB Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PowerPAK 10 x 12 | ||
Mounting Type PCB Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit
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