Vishay Dual Silicon N-Channel MOSFET, 47 A, 650 V, 8-Pin PowerPAK 10 x 12 SIHK045N60EF-T1GE3
- RS Stock No.:
- 268-8305
- Mfr. Part No.:
- SIHK045N60EF-T1GE3
- Brand:
- Vishay
Save 26% when you buy 250 units
Subtotal (1 unit)*
£8.84
(exc. VAT)
£10.61
(inc. VAT)
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In Stock
- 1,884 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 - 49 | £8.84 |
| 50 - 99 | £7.99 |
| 100 - 249 | £6.63 |
| 250 + | £6.49 |
*price indicative
- RS Stock No.:
- 268-8305
- Mfr. Part No.:
- SIHK045N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 47 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PowerPAK 10 x 12 | |
| Mounting Type | PCB Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Silicon | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PowerPAK 10 x 12 | ||
Mounting Type PCB Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The Vishay power MOSFET with fast body diode and 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supp
Low effective capacitance
Avalanche energy rated
Low figure of merit
Avalanche energy rated
Low figure of merit
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