Vishay SIHK Type N-Channel MOSFET, 30 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK085N60EF-T1GE3
- RS Stock No.:
- 268-8306
- Mfr. Part No.:
- SIHK085N60EF-T1GE3
- Brand:
- Vishay
Subtotal (1 reel of 2000 units)*
£6,430.00
(exc. VAT)
£7,716.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2000 + | £3.215 | £6,430.00 |
*price indicative
- RS Stock No.:
- 268-8306
- Mfr. Part No.:
- SIHK085N60EF-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | SIHK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.085Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 9.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series SIHK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.085Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 9.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHK Series MOSFET, 650V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - SIHK085N60EF-T1GE3
This MOSFET is a high-voltage N-channel switching device designed for power conversion and control in industrial electronics. It operates as an enhancement-mode transistor suitable for PCB mounting and is intended for demanding applications that require robust thermal tolerance and substantial current handling.
Features and Benefits:
• 650V rating enables high-voltage switching capability • 30A continuous drain current supports heavy load duty • 0.085Ω Rds(on) reduces conduction losses at switching • 63nC typical gate charge allows predictable gate-drive design • 184W power dissipation permits significant heat throughput • 150°C maximum junction temperature supports high-temperature operation
Applications
• Suitable for high-voltage DC-DC converters in automation systems • Ideal for motor drive front-ends requiring high current headroom • Used for switch-mode power supplies in industrial electronics • Can be used for inverter stages in power control equipment
What gate-drive constraints should be considered for use?
The device tolerates gate voltages up to 30V and exhibits a typical total gate charge of 63nC, so drivers must supply sufficient charge and slew control within that voltage limit.
How should thermal management be arranged on the PCB?
With a maximum dissipation of 184W and high junction capability, provide substantial copper area, thermal vias and an appropriate heatsink attachment pattern to maintain safe operating temperatures.
What environmental temperature range will it tolerate during operation?
It operates down to -55°C and up to a maximum of 150°C, allowing deployment across broad ambient and elevated junction scenarios.
Which mounting approach is required for reliable assembly?
The part is intended for PCB mount in a PowerPAK 10x12 package with an 8-pin interface, so standard soldering processes for power packages should be used.
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