Infineon IPU Type N-Channel MOSFET, 9 A, 950 V Enhancement, 3-Pin PG-TO251-3
- RS Stock No.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.95
(exc. VAT)
£8.35
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,490 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £1.39 | £6.95 |
| 10 - 20 | £1.262 | £6.31 |
| 25 - 45 | £1.158 | £5.79 |
| 50 - 95 | £1.072 | £5.36 |
| 100 + | £0.992 | £4.96 |
*price indicative
- RS Stock No.:
- 273-3024
- Mfr. Part No.:
- IPU95R750P7AKMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Package Type | PG-TO251-3 | |
| Series | IPU | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.75Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 73W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 950V | ||
Package Type PG-TO251-3 | ||
Series IPU | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.75Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 73W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon power MOSFET is designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low power SMPS market. The integrated diode considerably improves ESD robustness, thus reduci
Easy to drive and to design in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
