MPN

Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3

RS Stock No.:: 273-7471
Mfr. Part No.:: IPU80R1K4P7AKMA1
Brand:: Infineon

Infineon 800V CoolMOS P7 MOSFET, 4 A, 800 V, 3-Pin PG-TO251-3

Bulk discount available

Subtotal (1 pack of 5 units)*

£3.96

(exc. VAT)

£4.75

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 1,495 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	£0.792	£3.96
10 - 20	£0.644	£3.22
25 - 45	£0.632	£3.16
50 - 95	£0.618	£3.09
100 +	£0.51	£2.55

*price indicative

RS Stock No.:: 273-7471
Mfr. Part No.:: IPU80R1K4P7AKMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4A
	Maximum Drain Source Voltage Vds	800V
	Series	800V CoolMOS P7
	Package Type	PG-TO251-3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1.4mΩ
	Forward Voltage Vf	0.9V
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Power Dissipation Pd	32W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC for Industrial Applications, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4A
	Maximum Drain Source Voltage Vds 800V
	Series 800V CoolMOS P7
	Package Type PG-TO251-3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1.4mΩ
	Forward Voltage Vf 0.9V
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Power Dissipation Pd 32W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC for Industrial Applications, RoHS
	Automotive Standard No

Datasheet - IPU80R1K4P7AKMA1

The Infineon MOSFET has better production yield by reducing ESD related failures. This MOSFET has less production issues and reduced field returns and easy to select right parts for fine tuning of designs. It enabling higher power density designs, BOM savings and lower assembly costs.

Fully optimized portfolio

Best in class performance

Easy to drive and to parallel

Integrated zener diode ESD protection