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Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1

RS Stock No.:: 273-3021
Mfr. Part No.:: IPP65R190CFD7AAKSA1
Brand:: Infineon

Infineon IPP65R190CFD7A Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin PG-TO220-3 IPP65R190CFD7AAKSA1

Bulk discount available

Subtotal (1 tube of 50 units)*

£103.15

(exc. VAT)

£123.80

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

500 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Tube*
50 - 50	£2.063	£103.15
100 +	£1.917	£95.85

*price indicative

RS Stock No.:: 273-3021
Mfr. Part No.:: IPP65R190CFD7AAKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	14A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO220-3
	Series	IPP65R190CFD7A
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	77W
	Typical Gate Charge Qg @ Vgs	28nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	AECQ101, RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 14A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO220-3
	Series IPP65R190CFD7A
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 77W
	Typical Gate Charge Qg @ Vgs 28nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals AECQ101, RoHS
	Automotive Standard AEC-Q101