Infineon IPA N-Channel MOSFET, 18 A, 600 V, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1
- RS Stock No.:
- 348-987
- Mfr. Part No.:
- IPAN60R180CM8XKSA1
- Brand:
- Infineon
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- RS Stock No.:
- 348-987
- Mfr. Part No.:
- IPAN60R180CM8XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | PG-TO220-3 | |
| Series | IPA | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type PG-TO220-3 | ||
Series IPA | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability.
Significant reduction of switching and conduction losses
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
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