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Infineon IPP Type N-Channel Power Transistor, 39 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1

RS Stock No.:: 349-118
Mfr. Part No.:: IPP339N20NM6AKSA1
Brand:: Infineon

Infineon IPP Type N-Channel Power Transistor, 39 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1

Bulk discount available

Subtotal (1 pack of 5 units)*

£11.03

(exc. VAT)

£13.235

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 500 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£2.206	£11.03
50 - 95	£2.096	£10.48
100 +	£1.942	£9.71

*price indicative

RS Stock No.:: 349-118
Mfr. Part No.:: IPP339N20NM6AKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	39A
	Maximum Drain Source Voltage Vds	200V
	Series	IPP
	Package Type	PG-TO220-3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	33.9mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	125W
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	24nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC for Industrial Applications
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 39A
	Maximum Drain Source Voltage Vds 200V
	Series IPP
	Package Type PG-TO220-3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 33.9mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 125W
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 24nC
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC for Industrial Applications
	Automotive Standard No

Datasheet - IPP339N20NM6AKSA1

COO (Country of Origin):: MY

The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring reduced conduction losses. The MOSFET also boasts an excellent gate charge x RDS(on) product (FOM) for superior switching performance and very low reverse recovery charge (Qrr) for efficient operation. It is 100% avalanche tested, ensuring robustness, and can operate at a high temperature of 175°C, making it reliable even in demanding environments.

Optimized for motor drives and battery powered applications

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020