Infineon IPP N-Channel MOSFET, 39 A, 200 V, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- RS Stock No.:
- 349-118
- Mfr. Part No.:
- IPP339N20NM6AKSA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 349-118
- Mfr. Part No.:
- IPP339N20NM6AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 39 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 39 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring reduced conduction losses. The MOSFET also boasts an excellent gate charge x RDS(on) product (FOM) for superior switching performance and very low reverse recovery charge (Qrr) for efficient operation. It is 100% avalanche tested, ensuring robustness, and can operate at a high temperature of 175°C, making it reliable even in demanding environments.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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