Infineon IPP N-Channel MOSFET, 136 A, 200 V, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- RS Stock No.:
- 349-410
- Mfr. Part No.:
- IPP069N20NM6AKSA1
- Brand:
- Infineon
Currently unavailable
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- RS Stock No.:
- 349-410
- Mfr. Part No.:
- IPP069N20NM6AKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 136 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 136 A | ||
Maximum Drain Source Voltage 200 V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 200 V is an N-channel, normal level MOSFET designed to deliver high efficiency in power applications. Key features include very low on-resistance (RDS(on)), which minimizes conduction losses, and an excellent gate charge x RDS(on) product (FOM) for superior switching performance. It also boasts very low reverse recovery charge (Qrr), enhancing efficiency and reducing switching losses. The device is equipped with a high avalanche energy rating, making it suitable for demanding conditions, and can operate at a high temperature of 175°C, ensuring reliability even in harsh environments.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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