Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

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Subtotal (1 pack of 25 units)*

£11.925

(exc. VAT)

£14.30

(inc. VAT)

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Per unit
Per Pack*
25 - 25£0.477£11.93
50 - 75£0.468£11.70
100 - 225£0.356£8.90
250 - 975£0.349£8.73
1000 +£0.216£5.40

*price indicative

Packaging Options:
RS Stock No.:
268-8340
Mfr. Part No.:
SIS112LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212-8

Series

SIS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

19.8W

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

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