Vishay SIS Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3

Subtotal (1 reel of 3000 units)*

£756.00

(exc. VAT)

£906.00

(inc. VAT)

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Units
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Per Reel*
3000 +£0.252£756.00

*price indicative

RS Stock No.:
268-8339
Mfr. Part No.:
SIS112LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.8A

Maximum Drain Source Voltage Vds

100V

Series

SIS

Package Type

PowerPAK 1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.119Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

19.8W

Typical Gate Charge Qg @ Vgs

11.8nC

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N channel TrenchFET generation 4 power MOSFET is single configuration MOSFET. It is lead free and halogen free and It is used an application as primary side switch, motor drive switch and boost converter.

Tuned for the lowest figure of merit

ROHS compliant

UIS tested 100 percent

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