Vishay SIS Type N-Channel MOSFET, 104 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA10BDN-T1-GE3
- RS Stock No.:
- 239-5398
- Mfr. Part No.:
- SISA10BDN-T1-GE3
- Brand:
- Vishay
Subtotal (1 pack of 10 units)*
£5.62
(exc. VAT)
£6.74
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 6,040 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £0.562 | £5.62 |
*price indicative
- RS Stock No.:
- 239-5398
- Mfr. Part No.:
- SISA10BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIS | |
| Package Type | PowerPAK 1212-8PT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0036Ω | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 63W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.7nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIS | ||
Package Type PowerPAK 1212-8PT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0036Ω | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 63W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.7nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
The Vishay N channel MOSFET has drain current of 104 A. It is used for high power density DC/DC, synchronous rectification, VRMs and embedded DC/DC, battery protection
100 % Rg and UIS tested
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