Vishay N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK 1212-8PT SISA18BDN-T1-GE3
- RS Stock No.:
- 252-0290
- Mfr. Part No.:
- SISA18BDN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£654.00
(exc. VAT)
£786.00
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 6,000 unit(s), ready to ship
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.218 | £654.00 |
*price indicative
- RS Stock No.:
- 252-0290
- Mfr. Part No.:
- SISA18BDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 60 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | PowerPAK 1212-8PT | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-8PT | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
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