Vishay SIS Type N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3
- RS Stock No.:
- 279-9975
- Mfr. Part No.:
- SIS4634LDN-T1-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
£5.14
(exc. VAT)
£6.17
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 28 June 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £0.514 | £5.14 |
| 50 - 90 | £0.384 | £3.84 |
| 100 - 240 | £0.341 | £3.41 |
| 250 - 990 | £0.337 | £3.37 |
| 1000 + | £0.33 | £3.30 |
*price indicative
- RS Stock No.:
- 279-9975
- Mfr. Part No.:
- SIS4634LDN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | 1212-8 | |
| Series | SIS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.029Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 19.8W | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type 1212-8 | ||
Series SIS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.029Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 19.8W | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Reduces switching related power loss
Fully lead (Pb)-free device
Related links
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