Infineon HEXFET Silicon N-Channel MOSFET, 24 A, 100 V, 3-Pin TO-220 Full-Pak IRFI1310NPBF

View all MOSFETs

Subtotal (1 tube of 2000 units)*

£1,100.00

(exc. VAT)

£1,320.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
2000 +£0.55£1,100.00

*price indicative

RS Stock No.:
262-6751
Mfr. Part No.:
IRFI1310NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220 Full-Pak

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Silicon

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated
High voltage isolation 2.5KVRMS

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links