Infineon HEXFET Type N-Channel MOSFET, 24 A, 100 V Enhancement, 3-Pin TO-220 IRFI1310NPBF

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

£6.40

(exc. VAT)

£7.70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 3,800 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45£1.28£6.40
50 - 120£1.152£5.76
125 - 245£1.074£5.37
250 - 495£1.01£5.05
500 +£0.832£4.16

*price indicative

Packaging Options:
RS Stock No.:
262-6752
Mfr. Part No.:
IRFI1310NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.036Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-34-458

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated

High voltage isolation 2.5KVRMS

Sponsored
Infineon CoolSic Schottky Diode
Infineon Logo
Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency
Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.
Explore the Infineon range today

Related links