Infineon HEXFET Silicon N-Channel MOSFET, 24 A, 100 V, 3-Pin TO-220 Full-Pak IRFI1310NPBF

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Subtotal (1 pack of 5 units)*

£6.40

(exc. VAT)

£7.70

(inc. VAT)

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Per Pack*
5 - 45£1.28£6.40
50 - 120£1.152£5.76
125 - 245£1.074£5.37
250 - 495£1.01£5.05
500 +£0.832£4.16

*price indicative

Packaging Options:
RS Stock No.:
262-6752
Mfr. Part No.:
IRFI1310NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

TO-220 Full-Pak

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It has 4.8mm sink to lead creep age distance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Fully avalanche rated
High voltage isolation 2.5KVRMS

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