Infineon HEXFET Silicon N-Channel MOSFET, 51 A, 150 V, 3-Pin TO-220AB IRFB52N15DPBF

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Subtotal (1 tube of 1000 units)*

£1,110.00

(exc. VAT)

£1,330.00

(inc. VAT)

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Units
Per unit
Per Tube*
1000 +£1.11£1,110.00

*price indicative

RS Stock No.:
262-6747
Mfr. Part No.:
IRFB52N15DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters and plasma display panel.

Fully characterized avalanche voltage and current

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