Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

£6.04

(exc. VAT)

£7.25

(inc. VAT)

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Per unit
Per Pack*
10 - 90£0.604£6.04
100 - 240£0.574£5.74
250 - 490£0.55£5.50
500 - 990£0.525£5.25
1000 +£0.332£3.32

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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