Infineon HEXFET Dual Silicon N-Channel MOSFET, 1.9 A, 150 V, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

£6.04

(exc. VAT)

£7.25

(inc. VAT)

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Per Pack*
10 - 90£0.604£6.04
100 - 240£0.574£5.74
250 - 490£0.55£5.50
500 - 990£0.525£5.25
1000 +£0.332£3.32

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

150 V

Package Type

SO-8

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

Silicon

Number of Elements per Chip

2

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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