Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

£5.72

(exc. VAT)

£6.86

(inc. VAT)

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Per Pack*
10 - 90£0.572£5.72
100 - 240£0.543£5.43
250 - 490£0.521£5.21
500 - 990£0.498£4.98
1000 +£0.315£3.15

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

28nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5mm

Height

1.75mm

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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