Infineon HEXFET Type N-Channel MOSFET, 3.6 A, 150 V Enhancement, 8-Pin SO-8 IRF7451TRPBF

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Subtotal (1 pack of 10 units)*

£5.72

(exc. VAT)

£6.86

(inc. VAT)

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10 - 90£0.572£5.72
100 - 240£0.543£5.43
250 - 490£0.521£5.21
500 - 990£0.498£4.98
1000 +£0.315£3.15

*price indicative

Packaging Options:
RS Stock No.:
262-6734
Mfr. Part No.:
IRF7451TRPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.6A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

28nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Length

5mm

Width

4 mm

Height

1.75mm

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon power MOSFET has low gate to drain charge to reduce switching losses. It is suitable for use with high frequency DC-DC converters.

Fully characterized avalanche voltage and current

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