STMicroelectronics N-Channel MOSFET, 32 A, 650 V, 3-Pin ACEPACK SMIT SH32N65DM6AG
- RS Stock No.:
- 261-5477
- Mfr. Part No.:
- SH32N65DM6AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 200 units)*
£2,751.80
(exc. VAT)
£3,302.20
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
200 - 200 | £13.759 | £2,751.80 |
400 + | £13.415 | £2,683.00 |
*price indicative
- RS Stock No.:
- 261-5477
- Mfr. Part No.:
- SH32N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 32 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | ACEPACK SMIT | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type ACEPACK SMIT | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
- COO (Country of Origin):
- PH
The STMicroelectronics automotive grade N channel power MOSFET combination of two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. The DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Half bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
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