STMicroelectronics MDmesh DM6 Dual N-Channel MOSFET, 53 A, 650 V, 8-Pin ACEPACK SMIT SH63N65DM6AG
- RS Stock No.:
- 152-113
- Mfr. Part No.:
- SH63N65DM6AG
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 tape of 1 unit)*
£30.96
(exc. VAT)
£37.15
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 200 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
---|---|
1 - 9 | £30.96 |
10 - 99 | £27.87 |
100 + | £25.70 |
*price indicative
- RS Stock No.:
- 152-113
- Mfr. Part No.:
- SH63N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 53 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | ACEPACK SMIT | |
Series | MDmesh DM6 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 53 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type ACEPACK SMIT | ||
Series MDmesh DM6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
AQG 324 qualified
Half-bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
Half-bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance
Related links
- STMicroelectronics MDmesh DM6 Dual N-Channel MOSFET 650 V, 8-Pin ACEPACK SMIT SH63N65DM6AG
- STMicroelectronics HB Series Dual P-Channel MOSFET 650 V Depletion, 9-Pin ACEPACK SMIT STGSH80HB65DAG
- STMicroelectronics N-Channel MOSFET 650 V, 3-Pin ACEPACK SMIT SH68N65DM6AG
- STMicroelectronics N-Channel MOSFET 650 V, 3-Pin ACEPACK SMIT SH32N65DM6AG
- STMicroelectronics 600V 85A 9-Pin ACEPACK SMIT STTH120RQ06-M2Y
- STMicroelectronics MDmesh 53 A 4-Pin ISOTOP STE53NC50
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R033M2HXKSA1
- Infineon CoolSiC Silicon N-Channel MOSFET 650 V, 4-Pin TO-247-4 IMZA65R030M1HXKSA1