STMicroelectronics M2TP80M12W2 8 SiC N-Channel MOSFET, 30 A, 1200 V, 32-Pin ACEPACK DMT-32 M2TP80M12W2-2LA
- RS Stock No.:
- 640-674
- Mfr. Part No.:
- M2TP80M12W2-2LA
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 unit)*
£52.73
(exc. VAT)
£63.28
(inc. VAT)
FREE delivery for orders over £50.00
New product - Preorder today
- Shipping from 10 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £52.73 |
| 5 + | £51.14 |
*price indicative
- RS Stock No.:
- 640-674
- Mfr. Part No.:
- M2TP80M12W2-2LA
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Series | M2TP80M12W2 | |
| Package Type | ACEPACK DMT-32 | |
| Mounting Type | Through Hole | |
| Pin Count | 32 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 8 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Series M2TP80M12W2 | ||
Package Type ACEPACK DMT-32 | ||
Mounting Type Through Hole | ||
Pin Count 32 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 8 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high-efficiency, automotive-grade power module built in the ACEPACK DMT-32 package. It implements a 3-phase four-wire power factor correction (PFC) topology using six second-generation silicon carbide (SiC) MOSFETs and two rectifier diodes. Designed for the PFC stage of on-board chargers (OBCs) in electric and hybrid vehicles, it offers a compact, thermally optimized solution with integrated temperature sensing.
1200 V silicon carbide MOSFETs with typical RDS(on) of 84 mΩ
Implements a 3-phase four-wire power factor correction (PFC) topology
Includes 1200 V / 20 A rectifier diodes
Integrated NTC thermistor for real-time temperature monitoring
Implements a 3-phase four-wire power factor correction (PFC) topology
Includes 1200 V / 20 A rectifier diodes
Integrated NTC thermistor for real-time temperature monitoring
Related links
- STMicroelectronics M2P45M12W2 Hex SiC N-Channel MOSFET 1200 V, 32-Pin ACEPACK DMT-32 M2P45M12W2-1LA
- STMicroelectronics M1F Quad SiC MOSFET 1200 V, 32-Pin ACEPACK DMT-32 M1F45M12W2-1LA
- Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-HSOF-8 IPT014N10N5ATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 120 V, 8-Pin PG-HSOF-8 IPT017N12NM6ATMA1
- Infineon IMT SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IMT65R107M1HXUMA1
- Infineon OptiMOS SiC N-Channel MOSFET 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1
- Infineon OptiMOS SiC N-Channel MOSFET 60 V, 8-Pin PG-HSOF-8-1 IAUTN06S5N008ATMA1
