STMicroelectronics M2P45M12W2 Hex SiC N-Channel MOSFET, 30 A, 1200 V, 32-Pin ACEPACK DMT-32 M2P45M12W2-1LA
- RS Stock No.:
- 640-673
- Mfr. Part No.:
- M2P45M12W2-1LA
- Brand:
- STMicroelectronics
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£62.14
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£74.57
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Units | Per unit |
|---|---|
| 1 - 4 | £62.14 |
| 5 + | £60.28 |
*price indicative
- RS Stock No.:
- 640-673
- Mfr. Part No.:
- M2P45M12W2-1LA
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 1200 V | |
| Package Type | ACEPACK DMT-32 | |
| Series | M2P45M12W2 | |
| Mounting Type | Through Hole | |
| Pin Count | 32 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 6 | |
| Transistor Material | SiC | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 1200 V | ||
Package Type ACEPACK DMT-32 | ||
Series M2P45M12W2 | ||
Mounting Type Through Hole | ||
Pin Count 32 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 6 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- CN
The STMicroelectronics automotive-grade power module housed in the ACEPACK DMT-32 package. It implements a sixpack topology using second-generation silicon carbide (SiC) MOSFETs, optimized for the DC/DC converter stage in on-board chargers (OBCs) for hybrid and electric vehicles. Designed for high-efficiency and high-frequency switching, it integrates an NTC thermistor for temperature monitoring and features an aluminum nitride (AlN) insulated substrate for superior thermal performance.
1200 V blocking voltage for high-voltage applications
Typical RDS(on) of 47.5 mΩ for reduced conduction losses
Maximum junction temperature of 175 °C for thermal robustness
DBC Cu-AlN-Cu substrate for efficient heat dissipation
3 kV isolation voltage for enhanced safety
Integrated NTC sensor for real-time thermal feedback
Typical RDS(on) of 47.5 mΩ for reduced conduction losses
Maximum junction temperature of 175 °C for thermal robustness
DBC Cu-AlN-Cu substrate for efficient heat dissipation
3 kV isolation voltage for enhanced safety
Integrated NTC sensor for real-time thermal feedback
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