STMicroelectronics N-Channel MOSFET, 30 A, 650 V HU3PAK SCT055HU65G3AG

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Subtotal (1 reel of 600 units)*

£5,049.60

(exc. VAT)

£6,059.40

(inc. VAT)

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  • 999,999,600 unit(s) shipping from 01 October 2026
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Units
Per unit
Per Reel*
600 - 600£8.416£5,049.60
1200 +£8.206£4,923.60

*price indicative

RS Stock No.:
261-5041
Mfr. Part No.:
SCT055HU65G3AG
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

650 V

Package Type

HU3PAK

Mounting Type

Surface Mount

Channel Mode

Enhancement

COO (Country of Origin):
MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package


The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency

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