STMicroelectronics N-Channel MOSFET, 10 A, 800 V Tape and Reel SCT040HU65G3AG
- RS Stock No.:
- 261-5040
- Mfr. Part No.:
- SCT040HU65G3AG
- Brand:
- STMicroelectronics
Save 18% when you buy 500 units
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£10.92
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£13.10
(inc. VAT)
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In Stock
- 217 unit(s) ready to ship
- Plus 999,999,782 unit(s) shipping from 01 October 2026
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Units | Per unit |
---|---|
1 - 9 | £10.92 |
10 - 99 | £10.37 |
100 - 249 | £9.86 |
250 - 499 | £9.36 |
500 + | £8.89 |
*price indicative
- RS Stock No.:
- 261-5040
- Mfr. Part No.:
- SCT040HU65G3AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 800 V | |
Package Type | Tape and Reel | |
Mounting Type | Surface Mount | |
Channel Mode | Enhancement | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type Tape and Reel | ||
Mounting Type Surface Mount | ||
Channel Mode Enhancement | ||
- COO (Country of Origin):
- JP
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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