Infineon HEXFET N-Channel MOSFET, 12 A, 80 V MG-WDSON-5 IRF6646TRPBF

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Subtotal (1 pack of 2 units)*

£4.54

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£5.44

(inc. VAT)

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2 - 18£2.27£4.54
20 - 48£2.045£4.09
50 - 98£1.905£3.81
100 - 198£1.775£3.55
200 +£1.66£3.32

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Packaging Options:
RS Stock No.:
258-3963
Mfr. Part No.:
IRF6646TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

80 V

Package Type

MG-WDSON-5

Series

HEXFET

Mounting Type

Surface Mount

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Technique


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