Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

RS Stock No.:: 258-3962
Mfr. Part No.:: IRF6646TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 68 A, 80 V WDSON

Subtotal (1 reel of 4800 units)*

£3,787.20

(exc. VAT)

£4,545.60

(inc. VAT)

FREE delivery for orders over £50.00

Stock information currently inaccessible

Units	Per unit	Per Reel*
4800 +	£0.789	£3,787.20

*price indicative

RS Stock No.:: 258-3962
Mfr. Part No.:: IRF6646TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Series	HEXFET
	Package Type	WDSON
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	9.5mΩ
	Typical Gate Charge Qg @ Vgs	36nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Maximum Power Dissipation Pd	89W
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Series HEXFET
	Package Type WDSON
	Mount Type Surface
	Maximum Drain Source Resistance Rds 9.5mΩ
	Typical Gate Charge Qg @ Vgs 36nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Maximum Power Dissipation Pd 89W
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF6646TRPBF

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs

Ideal for High Performance Isolated Converter

Primary Switch Socket

Optimized for Synchronous Rectification

Low Conduction Losses

High Cdv/dt Immunity

Low Profile (<0.7mm)

Dual Sided Cooling Compatible

Compatible with existing Surface Mount Technique