Infineon HEXFET N-Channel MOSFET, 12 A, 80 V MG-WDSON-5 IRF6646TRPBF

Subtotal (1 reel of 4800 units)*

£3,787.20

(exc. VAT)

£4,545.60

(inc. VAT)

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Units
Per unit
Per Reel*
4800 +£0.789£3,787.20

*price indicative

RS Stock No.:
258-3962
Mfr. Part No.:
IRF6646TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

MG-WDSON-5

Mounting Type

Surface Mount

The Infineon HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

Application Specific MOSFETs
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Technique


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