onsemi N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NTTFS6H850NTAG
- RS Stock No.:
- 178-4317
- Mfr. Part No.:
- NTTFS6H850NTAG
- Brand:
- onsemi
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- RS Stock No.:
- 178-4317
- Mfr. Part No.:
- NTTFS6H850NTAG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 68 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.15mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 3.6 nC @ 10 V | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.75mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 68 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 3.15mm | ||
Number of Elements per Chip 1 | ||
Width 3.15mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 3.6 nC @ 10 V | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.75mm | ||
- COO (Country of Origin):
- MY
Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.
Features
Low On-Resistance
Low Gate Charge
Small Footprint (3x3 mm)
Benefits
Minimizes Conduction Losses
Minimizes Switching Losses
Compact Design
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Synchronous Rectification
End Products
Motor Control
Battery management
Switching Power supplies
Low On-Resistance
Low Gate Charge
Small Footprint (3x3 mm)
Benefits
Minimizes Conduction Losses
Minimizes Switching Losses
Compact Design
Applications
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Synchronous Rectification
End Products
Motor Control
Battery management
Switching Power supplies
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