Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	68A
	Maximum Drain Source Voltage Vds	80V
	Package Type	WDFN
	Series	NTTFS6H850N
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	9.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	3.6nC
	Maximum Power Dissipation Pd	107W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Length	3.15mm
	Width	3.15 mm
	Height	0.75mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 68A
	Maximum Drain Source Voltage Vds 80V
	Package Type WDFN
	Series NTTFS6H850N
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 9.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 3.6nC
	Maximum Power Dissipation Pd 107W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Length 3.15mm
	Width 3.15 mm
	Height 0.75mm
	Standards/Approvals No
	Automotive Standard No

Commercial Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance.

Features

Low On-Resistance

Low Gate Charge

Small Footprint (3x3 mm)

Benefits

Minimizes Conduction Losses

Minimizes Switching Losses

Compact Design

Applications

Reverser Battery protection

Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)

Synchronous Rectification

End Products

Motor Control

Battery management

Switching Power supplies

onsemi NTTFS6H850N Type N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN

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