onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG

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Packaging Options:
RS Stock No.:
172-3379
Mfr. Part No.:
NVTFS6H850NTAG
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Series

NVTFS6H850N

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.15mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Length

3.15mm

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable

Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems

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