onsemi PowerTrench N-Channel MOSFET, 100 A, 238 A, 40 V, 8-Pin PQFN8 FDMS8320L
- RS Stock No.:
- 166-2964
- Mfr. Part No.:
- FDMS8320L
- Brand:
- onsemi
Subtotal (1 reel of 3000 units)*
£3,522.00
(exc. VAT)
£4,227.00
(inc. VAT)
FREE delivery for orders over £50.00
- 999,999,000 unit(s) shipping from 15 January 2026
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £1.174 | £3,522.00 |
*price indicative
- RS Stock No.:
- 166-2964
- Mfr. Part No.:
- FDMS8320L
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 100 A, 238 A | |
Maximum Drain Source Voltage | 40 V | |
Series | PowerTrench | |
Package Type | PQFN8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 1.7 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 104 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Typical Gate Charge @ Vgs | 121 nC @ 10 V | |
Transistor Material | Si | |
Length | 5mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 6mm | |
Minimum Operating Temperature | -55 °C | |
Height | 1.05mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A, 238 A | ||
Maximum Drain Source Voltage 40 V | ||
Series PowerTrench | ||
Package Type PQFN8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.7 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 121 nC @ 10 V | ||
Transistor Material Si | ||
Length 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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