MPN

Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF

RS Stock No.:: 257-5887
Mfr. Part No.:: IRFH5301TRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN IRFH5301TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)*

£2.92

(exc. VAT)

£3.505

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 3,640 unit(s) shipping from 09 February 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 45	£0.584	£2.92
50 - 120	£0.52	£2.60
125 - 245	£0.492	£2.46
250 - 495	£0.37	£1.85
500 +	£0.36	£1.80

*price indicative

RS Stock No.:: 257-5887
Mfr. Part No.:: IRFH5301TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	30V
	Package Type	PQFN
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	1.85mΩ
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	37nC
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	110W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	0.9mm
	Width	5 mm
	Length	6mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 30V
	Package Type PQFN
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 1.85mΩ
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 37nC
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 110W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 0.9mm
	Width 5 mm
	Length 6mm
	Automotive Standard No

Datasheet - IRFH5301TRPBF

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Industry standard surface-mount power package

Product qualification according to JEDEC standard

Silicon optimized for applications switching below <100 kHz

Softer body-diode compared to previous silicon generation

Wide portfolio available