Infineon HEXFET Fifth Generation N-Channel MOSFET, 1.9 A, 55 V SOT-223 IRFL014NTRPBF
- RS Stock No.:
- 257-5817
- Mfr. Part No.:
- IRFL014NTRPBF
- Brand:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (10 units, in packs of 10)*
£5.41
(exc. VAT)
£6.49
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 4,390 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £0.541 | £5.41 |
| 100 - 240 | £0.513 | £5.13 |
| 250 - 490 | £0.494 | £4.94 |
| 500 - 990 | £0.352 | £3.52 |
| 1000 + | £0.276 | £2.76 |
*price indicative
- RS Stock No.:
- 257-5817
- Mfr. Part No.:
- IRFL014NTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET Fifth Generation | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.16Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET Fifth Generation | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.16Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free | ||
Automotive Standard No | ||
The Infineon MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface mount package
Related links
- Infineon HEXFET Fifth Generation N-Channel MOSFET 55 V SOT-223
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223
- Infineon CoolMOS N-Channel MOSFET 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1
- Infineon HEXFET N-Channel MOSFET 100 V SOT-223
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET N-Channel MOSFET 100 V SOT-223 IRFL4310TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL024NTRPBF