ROHM N-Channel SiC Power Module, 204 A, 1200 V BSM180D12P2C101

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Subtotal (1 box of 12 units)*

£4,291.356

(exc. VAT)

£5,149.632

(inc. VAT)

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Units
Per unit
Per Box*
12 +£357.613£4,291.36

*price indicative

RS Stock No.:
246-1508
Mfr. Part No.:
BSM180D12P2C101
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

204 A

Maximum Drain Source Voltage

1200 V

Mounting Type

Screw Mount

Maximum Power Dissipation

1360 W

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.


MOSFET Transistors, ROHM Semiconductor

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