N-Channel SiC Power Module, 204 A, 1200 V ROHM BSM180D12P2C101

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

・SiC MOSFET-only power module
・High-speed switching and low switching loss
・Ensured reliability of body diode conduction
・Low body diode Qrr and trr

MOSFET Transistors, ROHM Semiconductor