ROHM BSM Dual SiC N-Channel SiC Power Module, 120 A, 1200 V, 4-Pin C BSM120D12P2C005

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Subtotal (1 unit)*

£354.61

(exc. VAT)

£425.53

(inc. VAT)

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1 - 4£354.61
5 - 9£345.39
10 - 24£336.52
25 +£328.01

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RS Stock No.:
144-2257
Mfr. Part No.:
BSM120D12P2C005
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

1200 V

Series

BSM

Package Type

C

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

935 W

Number of Elements per Chip

2

Length

122mm

Transistor Material

SiC

Maximum Operating Temperature

+150 °C

Width

45.6mm

Minimum Operating Temperature

-40 °C

Height

17mm

COO (Country of Origin):
JP

SiC Power Modules, ROHM


The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

Note

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.


MOSFET Transistors, ROHM Semiconductor

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