ROHM Half Bridge BSM Type N-Channel SiC Power Module, 240 A, 1200 V Enhancement, 4-Pin BSM120D12P2C005
- RS Stock No.:
- 144-2257
- Mfr. Part No.:
- BSM120D12P2C005
- Brand:
- ROHM
Bulk discount available
Subtotal (1 unit)*
£354.61
(exc. VAT)
£425.53
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £354.61 |
| 5 - 9 | £345.39 |
| 10 - 24 | £336.52 |
| 25 + | £328.01 |
*price indicative
- RS Stock No.:
- 144-2257
- Mfr. Part No.:
- BSM120D12P2C005
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | SiC Power Module | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 240A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | BSM | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Half Bridge | |
| Height | 17mm | |
| Width | 45.6 mm | |
| Standards/Approvals | No | |
| Length | 122mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type SiC Power Module | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 240A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series BSM | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Half Bridge | ||
Height 17mm | ||
Width 45.6 mm | ||
Standards/Approvals No | ||
Length 122mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Note
BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.
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