Dual SiC N-Channel SiC Power Module, 300 A, 1200 V, 4-Pin C ROHM BSM300D12P2E001

The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.

Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature

BSM180D12P2C101 SiC Power Module does not include Schottky Barrier Diodes.

MOSFET Transistors, ROHM Semiconductor