MPN

Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252

RS Stock No.:: 244-2257
Mfr. Part No.:: AUIRFR024NTRL
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 12 A, 75 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 3000 units)*

£4,680.00

(exc. VAT)

£5,610.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

3,000 unit(s) shipping from 20 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£1.56	£4,680.00

*price indicative

RS Stock No.:: 244-2257
Mfr. Part No.:: AUIRFR024NTRL
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	75V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	80nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 75V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 80nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - AUIRFR024NTRL

The Infineon AUIRFR024NTRL Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Advanced Planar Technology

Low On-Resistance Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified