Infineon HEXFET Silicon P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK AUIRFR5410TRL
- RS Stock No.:
- 229-1741
- Mfr. Part No.:
- AUIRFR5410TRL
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£2,616.00
(exc. VAT)
£3,138.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
---|---|---|
3000 + | £0.872 | £2,616.00 |
*price indicative
- RS Stock No.:
- 229-1741
- Mfr. Part No.:
- AUIRFR5410TRL
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 13 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.205 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.205 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
It is RoHS compliant
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