Infineon HEXFET Silicon P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK AUIRFR5410TRL

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Subtotal (1 pack of 5 units)*

£10.40

(exc. VAT)

£12.50

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20£2.08£10.40
25 - 45£1.83£9.15
50 - 120£1.726£8.63
125 - 245£1.602£8.01
250 +£1.476£7.38

*price indicative

Packaging Options:
RS Stock No.:
229-1742
Mfr. Part No.:
AUIRFR5410TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

It is lead free
It is RoHS compliant

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