Vishay E Type N-Channel MOSFET, 14 A, 650 V Enhancement, 3-Pin TO-220 SiHF080N60E-GE3
- RS Stock No.:
- 228-2854
- Mfr. Part No.:
- SiHF080N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.90
(exc. VAT)
£9.48
(inc. VAT)
FREE delivery for orders over £60.00
Last RS stock
- Final 928 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.95 | £7.90 |
| 20 - 48 | £3.555 | £7.11 |
| 50 - 98 | £3.36 | £6.72 |
| 100 - 198 | £3.16 | £6.32 |
| 200 + | £2.925 | £5.85 |
*price indicative
- RS Stock No.:
- 228-2854
- Mfr. Part No.:
- SiHF080N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 35W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 35W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
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