Vishay E Type N-Channel MOSFET, 4.4 A, 850 V Enhancement, 3-Pin TO-252 SiHD5N80AE-GE3

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Subtotal (1 pack of 10 units)*

£8.01

(exc. VAT)

£9.61

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 90£0.801£8.01
100 - 240£0.777£7.77
250 - 490£0.738£7.38
500 - 990£0.705£7.05
1000 +£0.665£6.65

*price indicative

Packaging Options:
RS Stock No.:
228-2852
Mfr. Part No.:
SiHD5N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.4A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.35Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

11nC

Maximum Power Dissipation Pd

62.5W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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