Vishay E Type N-Channel MOSFET, 3 A, 850 V Enhancement, 3-Pin TO-220 SiHA5N80AE-GE3
- RS Stock No.:
- 228-2840
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
£7.25
(exc. VAT)
£8.70
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 855 unit(s) ready to ship
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £1.45 | £7.25 |
| 50 - 245 | £1.376 | £6.88 |
| 250 - 495 | £1.302 | £6.51 |
| 500 - 1245 | £1.232 | £6.16 |
| 1250 + | £0.94 | £4.70 |
*price indicative
- RS Stock No.:
- 228-2840
- Mfr. Part No.:
- SiHA5N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | TO-220 | |
| Series | E | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.35Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Maximum Power Dissipation Pd | 29W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type TO-220 | ||
Series E | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.35Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Maximum Power Dissipation Pd 29W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
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- Vishay E Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-220