Vishay E Series Dual N-Channel MOSFET, 16.3 A, 850 V, 3-Pin TO-247AC SIHG21N80AEF-GE3
- RS Stock No.:
- 228-2867
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)*
£61.025
(exc. VAT)
£73.225
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,975 unit(s) shipping from 26 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £2.441 | £61.03 |
| 50 - 100 | £2.295 | £57.38 |
| 125 - 225 | £2.075 | £51.88 |
| 250 + | £1.953 | £48.83 |
*price indicative
- RS Stock No.:
- 228-2867
- Mfr. Part No.:
- SIHG21N80AEF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16.3 A | |
| Maximum Drain Source Voltage | 850 V | |
| Series | E Series | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.25 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 2 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 16.3 A | ||
Maximum Drain Source Voltage 850 V | ||
Series E Series | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.25 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Low effective capacitance (Co(er))
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