Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3
- RS Stock No.:
- 200-6868
- Mfr. Part No.:
- SIHU6N80AE-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,506.00
(exc. VAT)
£1,806.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.502 | £1,506.00 |
*price indicative
- RS Stock No.:
- 200-6868
- Mfr. Part No.:
- SIHU6N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.2 A, 5 A | |
| Maximum Drain Source Voltage | 850 V | |
| Series | E | |
| Package Type | IPAK (TO-251) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.95 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.2 A, 5 A | ||
Maximum Drain Source Voltage 850 V | ||
Series E | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.95 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.
Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
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