Vishay E N-Channel MOSFET, 3.2 A, 5 A, 850 V, 3-Pin IPAK SIHU6N80AE-GE3

Subtotal (1 reel of 3000 units)*

£1,506.00

(exc. VAT)

£1,806.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.502£1,506.00

*price indicative

RS Stock No.:
200-6868
Mfr. Part No.:
SIHU6N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.2 A, 5 A

Maximum Drain Source Voltage

850 V

Package Type

IPAK (TO-251)

Series

E

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection

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