Vishay E Type N-Channel MOSFET, 5 A, 850 V Enhancement, 3-Pin TO-251

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Subtotal (1 pack of 25 units)*

£23.925

(exc. VAT)

£28.70

(inc. VAT)

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Units
Per unit
Per Pack*
25 - 25£0.957£23.93
50 - 100£0.728£18.20
125 - 225£0.67£16.75
250 - 600£0.526£13.15
625 +£0.505£12.63

*price indicative

RS Stock No.:
200-6869
Mfr. Part No.:
SIHU6N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

850V

Series

E

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

22.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay SIHU6N80AE-GE3 is a E series power MOSFET.

Low figure-of-merit

Low effective capacitance (Ciss)

Reduced switching and conduction losses

Ultra low gate charge (Qg)

Avalanche energy rated (UIS)

Integrated Zener diode ESD protection

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